ITO films for antireflective and antistatic tube coatings prepared by dc magnetron sputtering

被引：32

作者：

Lobl, HP ^{[1
]}

Huppertz, M ^{[1
]}

Mergel, D ^{[1
]}

机构：

[1] UNIV ESSEN GESAMTHSCH,FACHBEREICH 7,D-45117 ESSEN,GERMANY

来源：

SURFACE & COATINGS TECHNOLOGY | 1996年 / 82卷 / 1-2期

关键词：

indium tin oxide; sputtering; film growth; donors; conductivity;

D O I：

10.1016/0257-8972(95)02644-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A reactive d.c. magnetron sputtering process with relatively high oxygen flow suitable for antireflective and antistatic (ARAS) coatings on display tubes is described. The sputtering conditions and their influence on optical, structural and electrical properties of indium tin oxide (ITO) films are discussed and compared with other ITO sputtering processes from a metallic target. Emphasis is placed on the relation between microstructure, defect structure and conductivity, and on the determination of the optimal process conditions for obtaining fine-grained films for optical applications that can withstand the 460 degrees C heat treatment during tube assembly. As an example, a simple three-layer broadband ARAS coating is investigated, consisting of a transparent conductive ITO layer, a TiO2 layer and a SiO2 layer on top.

引用

页码：90 / 98

页数：9

共 18 条

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