Influence of strain conditions on exciton dynamics and on thermal stability of photoluminescence of ZnCdSe/ZnSe quantum wells

被引：13

作者：

Godlewski, M

Bergman, JP

Monemar, B

Kurtz, E

Hommel, D

机构：

[1] LINKOPING UNIV, DEPT PHYS & MEASUREMENT TECHNOL, S-58183 LINKOPING, SWEDEN

[2] UNIV WURZBURG, D-97074 WURZBURG, GERMANY

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 19期

关键词：

D O I：

10.1063/1.117337

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Distinctly different exciton properties in pseudomorphic and strain relaxed ZnCdSe/ZnSe structures grown on GaAs are demonstrated. For pseudomorphic or partly strained structures temperature stability of photoluminescence depends on the distance from the ZnCdSe quantum well to GaAs/ZnSe interface and less on confinement energies. Densities of two-dimensional localized states and averaged localization energies, as seen by excitons, are determined from the photoluminescence kinetics measurements. These values are compared with the ones reported for contemporary GaAs/AlGaAs structures. (C) 1996 American Institute of Physics.

引用

页码：2843 / 2845

页数：3

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