High-κ Ir/TiTaO/TaN capacitors suitable for analog IC applications

被引：34

作者：

Chiang, KC ^{[1
]}

Huang, CC

Chin, A

Chen, WJ

McAlister, SP

Chiu, HF

Chen, JR

Chi, CC

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Nano Sci Technol Ctr, Hsinchu 300, Taiwan

[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117548, Singapore

[3] Natl Res Council Canada, Ottawa, ON, Canada

[4] Natl Tsing Hua Univ, Dept Mat Engn, Hsinchu 300, Taiwan

[5] Natl Tsing Hua Univ, Dept Phys, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 07期

关键词：

TiTaO; Ir; MIM; analog; ITRS;

D O I：

10.1109/LED.2005.851241

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed novel high-k Ir/TiTaO/TaN capacitors which have high-capacitance density (10.3 fF/mu m(2)), small leakage current at 2 V (1.2 x 10(-8) A/cm(2)), and low voltage linearity of the capacitance (89 ppm/V-2). These excellent results meet the TTRS roadmap requirements for precision -analog capacitors for the year 2018. The good performance is due to the very high K (45) achieved in the TiTaO dielectric and the high work-function (5.2 eV) provided by the Ir electrode.

引用

页码：504 / 506

页数：3

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