RF MIM capacitors using high-K Al2O3 and AlTiOx dielectrics

被引：17

作者：

Chen, SB ^{[1
]}

Lai, CH ^{[1
]}

Chin, A ^{[1
]}

Hsieh, JC ^{[1
]}

Liu, J ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

来源：

2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2002年

关键词：

D O I：

10.1109/MWSYM.2002.1011593

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Record high capacitance density of 0.5 and 1.0 muF/cm(2) are obtained for Al2O3 and AlTiOx MIM capacitors respectively, with loss tangent < 0.01 and process compatible to existing VLSI back-end integration. However, the AlTiOx MINI capacitor has large capacitance reduction as increasing frequencies. In contrast, the Al2O3 MINI capacitor has good device integrity of low leakage current of 4.3x10(-8) A/cm(2), small frequency-dependent capacitance reduction, and good reliability.

引用

页码：201 / 204

页数：4

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