Modified Thornton model for magnetron sputtered zinc oxide:: film structure and etching behaviour

被引：309

作者：

Kluth, O ^{[1
]}

Schöpe, G ^{[1
]}

Hüpkes, J ^{[1
]}

Agashe, C ^{[1
]}

Müller, J ^{[1
]}

Rech, B ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Photovoltaics, D-52425 Julich, Germany

来源：

THIN SOLID FILMS | 2003年 / 442卷 / 1-2期

关键词：

etching; sputtering; surface morphology; zinc oxide;

D O I：

10.1016/S0040-6090(03)00949-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO:Al films were prepared on glass substrates with different sputter techniques from ceramic ZnO:Al(2)O(3) target as well as metallic Zn:Al targets using a wide range of deposition parameters. Independent of the sputter technique, sputter pressure and substrate temperature were found to have a major influence on the electrical and structural properties of the ZnO:Al films. With an increasing deposition pressure, we observed a strong decrease in the carrier mobility and also an increase of the etching rate. The surface morphology obtAlned after etching of RF sputtered ZnO:Al systematically changes from crater-like to hill-like surface appearance with increasing pressure. The correlation of sputter parameters, film growth and structural properties is discussed in terms of a modified Thornton model. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：80 / 85

页数：6

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