Density of band-gap traps in polycrystalline films from photoconductivity transients using an improved Laplace transform method

被引：83

作者：

Studenikin, SA ^{[1
]}

Golego, N

Cocivera, M

机构：

[1] Univ Guelph, Guelph Waterloo Ctr Grad Work Chem, Guelph, ON N1G 2W1, Canada

[2] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 09期

关键词：

D O I：

10.1063/1.368746

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Slow relaxation of the photoconductivity over a period of days was studied in polycrystalline ZnO and TiO2 films prepared by spray pyrolysis. The phenomenon is described by a model involving deep sensitizing hole traps in the forbidden gap. The trap state distribution based on this model was calculated using an improved Laplace transform method. For ZnO and TiO2 films, the density of states was shown to have a peak-like distribution with a maximum near the lower third of the energy gap. (C) 1998 American Institute of Physics. [S0021-8979(98)06621-3].

引用

页码：5001 / 5004

页数：4

共 13 条

[1]

Bube R.H., 1992, Photoelectronic Properties of Semiconductors

[2]

GOLEGO N, IN PRESS J MATER RES

[3]

MADAN A, 1988, PHYSICS APPL AMORPHO

[4] DETERMINATION OF GAP-STATE DISTRIBUTIONS IN AMORPHOUS-SEMICONDUCTORS FROM TRANSIENT PHOTOCURRENTS USING A FOURIER-TRANSFORM TECHNIQUE [J].

MAIN, C ;

BRUGGEMANN, R ;

WEBB, DP ;

REYNOLDS, S .

SOLID STATE COMMUNICATIONS, 1992, 83 (06) :401-405

[5] INFLUENCE OF VARIOUS DISTRIBUTIONS OF LOCALIZED STATES UPON TRANSIT PULSE DISPERSION IN AMORPHOUS-SEMICONDUCTORS [J].

MARSHALL, JM ;

MICHIEL, H ;

ADRIAENSSENS, GJ .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (02) :211-223

[6] SIMPLE ANALYSIS OF TRANSIENT PHOTOCONDUCTIVITY FOR DETERMINATION OF LOCALIZED-STATE DISTRIBUTIONS IN AMORPHOUS-SEMICONDUCTORS USING LAPLACE TRANSFORM [J].

NAITO, H ;

OKUDA, M .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) :3541-3542

[7]

NAITO H, 1996, J NONCRYST SOLIDS, V198, P363

[8] TRANSIENT PHOTOCONDUCTIVITY AND PHOTOINDUCED OPTICAL-ABSORPTION IN AMORPHOUS-SEMICONDUCTORS [J].

ORENSTEIN, J ;

KASTNER, MA ;

VANINOV, V .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (01) :23-62

[9]

SCHRODER DK, 1990, SEMICONDUCTOR MAT DE

[10] Optical and electrical properties of undoped ZnO films grown by spray pyrolysis of zinc nitrate solution [J].

Studenikin, SA ;

Golego, N ;

Cocivera, M .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (04) :2104-2111

← 1 2 →