Nanomechanical investigations and modifications of thin films based on scanning force methods

被引：9

作者：

Allers, W ^{[1
]}

Hahn, C ^{[1
]}

Lohndorf, M ^{[1
]}

Lukas, S ^{[1
]}

Pan, S ^{[1
]}

Schwarz, UD ^{[1
]}

Wiesendanger, R ^{[1
]}

机构：

[1] UNIV HAMBURG,CTR MICROSTRUCT RES,D-20355 HAMBURG,GERMANY

来源：

NANOTECHNOLOGY | 1996年 / 7卷 / 04期

关键词：

D O I：

10.1088/0957-4484/7/4/007

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have studied the nanomechanical properties of thin C-60 films epitaxially grown on GeS(001) substrates by scanning force methods. The local frictional coefficient derived for C-60 islands was found to be significantly smaller than on the GeS(001) substrate demonstrating that well ordered C-60 films can lower the frictional force even compared with a layered material. In the second part of our study, we have used a scanning force microscope (SFM) for nanomechanical modification of a variety of thin film substrates including high-T-c superconductors and thin metallic films on insulating substrates. A combination of photolithography and SFM-based nanofabrication allowed to link the nanoscopic to the macroscopic world and to perform transport measurements on the nanofabricated structures.

引用

页码：346 / 350

页数：5

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