III-nitride blue microdisplays

被引：288

作者：

Jiang, HX ^{[1
]}

Jin, SX ^{[1
]}

Li, J ^{[1
]}

Shakya, J ^{[1
]}

Lin, JY ^{[1
]}

机构：

[1] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 09期

关键词：

D O I：

10.1063/1.1351521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Prototype blue microdisplays have been fabricated from InGaN/GaN quantum wells. The device has a dimension of 0.5 x 0.5 mm(2) and consists of 10 x 10 pixels 12 mum in diameter. Emission properties such as electroluminescence spectra, output power versus forward current (L-I) characteristic, viewing angle, and uniformity have been measured. Due to the unique properties of III-nitride wide-band-gap semiconductors, microdisplays fabricated from III nitrides can potentially provide unsurpassed performance, including high-brightness/resolution/contrast, high-temperature/high-power operation, high shock resistance, wide viewing angles, full-color spectrum capability, long life, high speed, and low-power consumption, thus providing an enhancement and benefit to the present capabilities of miniature display systems. (C) 2001 American Institute of Physics.

引用

页码：1303 / 1305

页数：3

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