Polarization-enhanced Mg doping of AlGaN/GaN superlattices

被引:148
作者
Kozodoy, P [1 ]
Smorchkova, YP
Hansen, M
Xing, HL
DenBaars, SP
Mishra, UK
Saxler, AW
Perrin, R
Mitchel, WC
机构
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[3] USAF, Res Lab, AFRL MLPO, Wright Patterson AFB, OH 45433 USA
关键词
D O I
10.1063/1.125042
中图分类号
O59 [应用物理学];
学科分类号
摘要
The hole-transport properties of Mg-doped AlGaN/GaN superlattices are carefully examined. Variable-temperature Hall-effect measurements indicate that the use of such superlattices enhances the average hole concentration at a temperature of 120 K by over five orders of magnitude compared to a bulk GaN film (the enhancement at room temperature is a factor of 9). An unusual modulation-doping scheme, which has been realized using molecular-beam epitaxy, has yielded high-hole-mobility superlattices and conclusively demonstrated the pivotal role of piezoelectric and spontaneous polarization in determining the band structure of the superlattices. (C) 1999 American Institute of Physics. [S0003-6951(99)04442-3].
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页码:2444 / 2446
页数:3
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