Polarization-enhanced Mg doping of AlGaN/GaN superlattices

被引：148

作者：

Kozodoy, P ^{[1
]}

Smorchkova, YP

Hansen, M

Xing, HL

DenBaars, SP

Mishra, UK

Saxler, AW

Perrin, R

Mitchel, WC

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] USAF, Res Lab, AFRL MLPO, Wright Patterson AFB, OH 45433 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 16期

关键词：

D O I：

10.1063/1.125042

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hole-transport properties of Mg-doped AlGaN/GaN superlattices are carefully examined. Variable-temperature Hall-effect measurements indicate that the use of such superlattices enhances the average hole concentration at a temperature of 120 K by over five orders of magnitude compared to a bulk GaN film (the enhancement at room temperature is a factor of 9). An unusual modulation-doping scheme, which has been realized using molecular-beam epitaxy, has yielded high-hole-mobility superlattices and conclusively demonstrated the pivotal role of piezoelectric and spontaneous polarization in determining the band structure of the superlattices. (C) 1999 American Institute of Physics. [S0003-6951(99)04442-3].

引用

页码：2444 / 2446

页数：3

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