Aluminum gallium nitride short-period superlattices doped with magnesium

被引:47
作者
Saxler, A [1 ]
Mitchel, WC
Kung, P
Razeghi, M
机构
[1] USAF, Res Lab, Mat & Mfg Directorate, AFRL MLPO, Wright Patterson AFB, OH 45433 USA
[2] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA
关键词
D O I
10.1063/1.123744
中图分类号
O59 [应用物理学];
学科分类号
摘要
Short-period superlattices consisting of alternating layers of GaN:Mg and AlGaN:Mg were grown by low-pressure organometallic vapor phase epitaxy. The electrical properties of these superlattices were measured as a function of temperature and compared to conventional AlGaN:Mg layers. It is shown that the optical absorption edge can be shifted to shorter wavelengths while lowering the acceptor ionization energy by using short-period superlattice structures instead of bulk-like AlGaN:Mg. (C) 1999 American Institute of Physics. [S0003-6951(99)03714-6].
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页码:2023 / 2025
页数:3
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