A fully integrated 4.8-6 GHz Power Amplifier with on-chip output balun in 38 GHz-fT Si-Bipolar

被引：6

作者：

Bakalski, W ^{[1
]}

Simbürger, W ^{[1
]}

Thüringer, R ^{[1
]}

Wohlmuth, HD ^{[1
]}

Scholtz, AL ^{[1
]}

机构：

[1] Infineon Technol AG, D-81730 Munich, Germany

来源：

2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2003年

关键词：

D O I：

10.1109/MWSYM.2003.1212467

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated radio frequency power amplifier for 4.8-6 GHz has been realized in a 38 GHz-f(T), 0.25 mum-Si-BiCMOS technology. The balanced 2-stage push-pull power amplifier uses two on-chip transformers as input balun and for inter-stage matching and an LC-type output balun with planar inductors. With this output network no external elements are required. At 1.2V, 1.5V, 2V supply voltages output powers of 17 dBm, 18.9 dBm, 20.7 dBm are achieved at 5.8 GHz. The small-signal gain is 23 dB.

引用

页码：695 / 698

页数：4

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