Excitonic emission in GaN films on AlN substrates using microwave-excited N plasma method

被引：6

作者：

Kai, A

Okada, K

Yamada, Y

Taguchi, T

Sasaki, F

Kobayashi, S

Tani, T

Taniguchi, H

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

[2] TOKUYAMA CORP,FUJISAWA LAB,FUJISAWA,KANAGAWA 252,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 2B期

关键词：

GaN; AlN; plasma; photoluminescence; time-resolved spectroscopy; free exciton; crystal growth;

D O I：

10.1143/JJAP.35.1424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hexagonal gallium nitride (GaN) films are grown on aluminum nitride ceramic substrates in gallium and nitrogen plasmas excited by microwaves. The band-edge photoluminescence properties of the GaN films are investigated at 77 K and at room temperature. A strong ultraviolet (UV) emission, consisting of two components with different decay characteristics, is observed. The fast decay component is due to free exciton recombination and the slow one is ascribed to recombination of localized excitons.

引用

页码：1424 / 1427

页数：4

共 13 条

[1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].