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Characterization of GaAlN/GaN superlattice heterostructures

被引：2
作者：
Makkai, Z
Pécz, B
di Forte-Poisson, MA
Huet, F
机构：
[1] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, HU-1525 Budapest, Hungary
[2] Thomson CSF, Cent Rech Lab, FR-91401 Orsay, France
来源：
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷
关键词：
inversion domains; segregation; superlattice; surface pits;
D O I：
10.4028/www.scientific.net/MSF.353-356.803
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
GaAlN/GaN superlattices are grown onto GaN by MOCVD. Cross sectional transmission electron microscopy is used for the characterisation of the layers. V-shaped surface pits are observed on the surface of the layers. Inversion domains are found consequently in the middle of the V pits. Segregation of aluminium occurs in the inverted hexagonal pyramids.
引用
收藏
页码：803 / 806
页数：4
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