An interfacial investigation of high-dielectric constant material hafnium oxide on Si substrate

被引：21

作者：

Chen, SC

Lou, JC

Chien, CH

Liu, PT

Chang, TC

机构：

[1] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30039, Taiwan

[2] Natl Nanodevice Lab, Hsinchu, Taiwan

[3] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[4] Natl Sun Yat Sen Univ, Inst Electroopt Engn, Kaohsiung 80424, Taiwan

[5] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 80424, Taiwan

来源：

THIN SOLID FILMS | 2005年 / 488卷 / 1-2期

关键词：

dielectrics; electrical properties and measurements; surface and interface state; transmission electron microscopy (TEM);

D O I：

10.1016/j.tsf.2005.01.023

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, the hump in the capacitance-voltage (C-V) curves, variation of leakage current, interfacial layer increase, and electron trapping in non-surface treated hafnium oxide (HfO2) samples were observed and investigated. From the results of the investigation, it was found that both rapid thermal oxidation and NH3 surface treatments improved the C-V curves. In addition, it was observed that samples treated with ammonia exhibited a lower leakage current when compared with the others. From the results of the dielectric, leakage current study, a severe electron trapping effect was exhibited under higher electric field stress. Finally, the conduction mechanism in the HfO2 thin film was dominated by Frenkel-Poole emission in a high electric field. (c) 2005 Elsevier B.V All rights reserved.

引用

页码：167 / 172

页数：6

共 10 条

[1] High-quality ultra-thin HfO2 gate dielectric MOSFETs with TaN electrode and nitridation surface preparation [J].