Improving magnetoresistance characteristics by toppings

被引：2

作者：

Lenssen, KMH ^{[1
]}

Giebeler, C ^{[1
]}

Kuiper, AET ^{[1
]}

机构：

[1] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2001年 / 37卷 / 04期

关键词：

giant magnetoresistance; magnetic films; magnetic sensors; magnetic spin tunneling; magnetoresistance; magnetoresistive devices; magnetoresistive random-access memory (MRAM); multilayer films; spin-valves;

D O I：

10.1109/20.950954

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Often magnetoresistance characteristics of robust giant magnetoresistance multilayers are not ideal in all respects (e.g., signal amplitude, hysteresis and field offset). Sometimes this can be corrected by means of external biasing magnets; however, for most applications this is not desirable. We have developed a new concept, which provides a new degree of freedom to improve the characteristics of GMR (or TMR) multilayers by the use of toppings without the need for external components or extra materials. With this method offset compensation, hysteresis elimination and the combination of both have been experimentally demonstrated in exchange-biased spin valves.

引用

收藏

页码：1739 / 1741

页数：3

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