Electron accumulation at the InAs(110) cleavage surface

被引：21

作者：

Karlsson, HS ^{[1
]}

Viselga, R ^{[1
]}

Karlsson, UO ^{[1
]}

机构：

[1] Royal Inst Technol, Dept Mat Phys, S-10044 Stockholm, Sweden

来源：

SURFACE SCIENCE | 1998年 / 402卷 / 1-3期

关键词：

angle-resolved photoemission; indium arsenide; laser methods;

D O I：

10.1016/S0039-6028(98)00002-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The InAs(110) cleavage surface is studied by photoelectron spectroscopy based on an amplified short-pulse titanium:sapphire laser system in both probe-only and pump-and-probe modes. The probe-only spectra show that electrons accumulate in the conduction band at the surface as a function of time after cleavage, while the pump-and-probe spectra show a different response from the excited accumulation layer peak when using s- and p-polarized probe pulses. Moreover, no surface photovoltage is detected when the accumulation layer is optically pumped. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：590 / 594

页数：5

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