Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes

被引:78
作者
Bychikhin, S
Pogany, D [1 ]
Vandamme, LKJ
Meneghesso, G
Zanoni, E
机构
[1] Vienna Tech Univ, Inst Solid State Elect, A-1040 Vienna, Austria
[2] Eindhoven Univ Technol, Dept Elect Engn, NL-5600 MB Eindhoven, Netherlands
[3] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy
关键词
D O I
10.1063/1.1942628
中图分类号
O59 [应用物理学];
学科分类号
摘要
The low-frequency noise sources are investigated in as-prepared and aged GaN light-emitting diodes (LEDs). Accelerated aging is performed by thermal (300 h at 240 degrees C) and electrical forward-bias stressing (20 and 50 mA for 2500 h). At low currents I < I-RTS, where I-RTS is a critical current, the low-frequency noise is dominated by random telegraph signal (RTS) noise on top of the 1/f noise. An explanation is given for the giant relative current jumps Delta I/I approximate to 50% and an expression for I-RTS is derived. The RTS noise in our devices is a less-sensitive diagnostic tool for studying the results of accelerated aging. Two components of the 1/f noise were observed: one is related to the quantum-well junction and the other is due to series resistance noise. The two 1/f spectra have different current dependences. It was found that the junction 1/f noise is not significantly affected by aging. However, a strong increase in series resistance noise, by a factor of 60-800 compared to unstressed devices, is observed after strong electrical and thermal aging. This high increase goes hand in hand with a relatively small increase in the value of the series resistance (13%-90%). This makes 1/f noise a very sensitive reliability indicator for GaN LEDs after accelerated aging. We discuss the physical origin of LED degradation. (c) 2005 American Institute of Physics.
引用
收藏
页数:7
相关论文
共 37 条
[1]   Kinetic model for degradation of light-emitting diodes [J].
Chuang, SL ;
Ishibashi, A ;
Kijima, S ;
Nakayama, N ;
Ukita, M ;
Taniguchi, S .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (06) :970-979
[2]   The noise analysis and noise reliability indicators of optoelectron coupled devices [J].
Dai, YS ;
Xu, JS .
SOLID-STATE ELECTRONICS, 2000, 44 (08) :1495-1500
[3]   On the origin of 1/f noise in polysilicon emitter bipolar transistors [J].
Deen, MJ ;
Rumyantsev, SL ;
Schroter, M .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (02) :1192-1195
[4]  
Feyaerts R., 2001, P 31 EUR SOL STAT DE, P355
[5]   EXPERIMENTAL STUDIES ON 1-F NOISE [J].
HOOGE, FN ;
KLEINPENNING, TGM ;
VANDAMME, LKJ .
REPORTS ON PROGRESS IN PHYSICS, 1981, 44 (05) :479-532
[6]   PHYSICAL MODEL FOR BURST NOISE IN SEMICONDUCTOR DEVICES [J].
HSU, ST ;
WHITTIER, RJ ;
MEAD, CA .
SOLID-STATE ELECTRONICS, 1970, 13 (07) :1055-&
[7]   1/f noise as a diagnostic tool to investigate the quality of anisotropic conductive adhesive (ACA) bonds for ball grid arrays (BGA's) [J].
Jongen, RJJM ;
VanDamme, LKJ ;
Bonné, HH ;
De Vries, JWC .
FLUCTUATION AND NOISE LETTERS, 2003, 3 (01) :L31-L50
[8]   NOISE IN SOLID-STATE MICROSTRUCTURES - A NEW PERSPECTIVE ON INDIVIDUAL DEFECTS, INTERFACE STATES AND LOW-FREQUENCY (1/F) NOISE [J].
KIRTON, MJ ;
UREN, MJ .
ADVANCES IN PHYSICS, 1989, 38 (04) :367-468
[9]   1-F NOISE IN P-N DIODES [J].
KLEINPENNING, TGM .
PHYSICA B & C, 1980, 98 (04) :289-299
[10]   CHARGE-CONTROL MODEL APPLIED TO 1/F NOISE IN LONG P+-N DIODES [J].
KLEINPENNING, TGM .
PHYSICA B & C, 1987, 145 (02) :190-194