Visible photoluminescence from a-Si:H/SiO2 superlattices fabricated by UHV evaporation

被引：8

作者：

Nishimoto, K

Sotta, D

Durand, HA

Etoh, K

Ito, K

机构：

[1] Japan Aviat Elect Ind Ltd, Cent Res Lab, Akishima, Tokyo 1968555, Japan

[2] Univ Louis Pasteur Strasbourg 1, Ecole Natl Super Phys Strasbourg, Illkirch Graffenstaden, France

来源：

JOURNAL OF LUMINESCENCE | 1998年 / 80卷 / 1-4期

关键词：

superlattice; hydrogenated amorphous Si; UHV evaporation;

D O I：

10.1016/S0022-2313(98)00144-6

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Hydrogenated amorphous-Si/SiO2 (a-Si:H/SiO2) superlattices with different a-Si:H thickness in the range of a few nanometers have been fabricated by ultra high vacuum evaporator (UHV evaporator). The photoluminescence (PL) of our superlattices is observed in the visible spectral region and the peak energy shifts to higher energy as the a-Si: H layer thickness decreases. The temperature dependence of the PL spectra reveals four sub-bands by fitting. Bands at 2.2, 1.9, 1.65 and 1.45 eV are detected and are attributed to E 'delta centers, nonbridging-oxygen-hole centers (NBOHC), Si/SiO2 interface and a-Si:H layer, respectively. We explain the overall blueshift of the PL spectra by the modification of the contribution of these sub-bands. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：439 / 444

页数：6

相关论文

共 10 条

[1] Real-time measurements of Si 2p core level during dry oxidation of Si(100) [J].

Enta, Y ;

Miyanishi, Y ;

Irimachi, H ;

Niwano, M ;

Suemitsu, M ;

Miyamoto, N ;

Shigemasa, E ;

Kato, H .

PHYSICAL REVIEW B, 1998, 57 (11) :6294-6296

[2] Photoluminescence from Si/SiO2 single quantum wells by selective excitation [J].

Kanemitsu, Y ;

Okamoto, S .

PHYSICAL REVIEW B, 1997, 56 (24) :R15561-R15564

[3] ELECTRONIC AND STRUCTURAL-PROPERTIES OF PLASMA-DEPOSITED A-SI-O-H - STORY OF O2 [J].

KNIGHTS, JC ;

STREET, RA ;

LUCOVSKY, G .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :279-284

[4] Quantum confined luminescence in Si/SiO2 superlattices [J].

Lockwood, DJ ;

Lu, ZH ;

Baribeau, JM .

PHYSICAL REVIEW LETTERS, 1996, 76 (03) :539-541

[5] QUANTUM CONFINEMENT AND LIGHT-EMISSION IN SIO2/SI SUPERLATTICES [J].

LU, ZH ;

LOCKWOOD, DJ ;

BARIBEAU, JM .

NATURE, 1995, 378 (6554) :258-260

[6] Visible photoluminescence from Si clusters in gamma-irradiated amorphous SiO2 [J].

Nishikawa, H ;

Watanabe, E ;

Ito, D ;

Sakurai, Y ;

Nagasawa, K ;

Ohki, Y .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (06) :3513-3517

[7] LUMINESCENCE IN AMORPHOUS-SEMICONDUCTORS [J].

STREET, RA .

ADVANCES IN PHYSICS, 1976, 25 (04) :397-453

[8] Photoluminescence in amorphous Si/SiO2 superlattices fabricated by magnetron sputtering [J].

Sullivan, BT ;

Lockwood, DJ ;

Labbe, HJ ;

Lu, ZH .

APPLIED PHYSICS LETTERS, 1996, 69 (21) :3149-3151

[9] PHOTOLUMINESCENCE FROM A SILICON QUANTUM-WELL FORMED ON SEPARATION BY IMPLANTED OXYGEN SUBSTRATE [J].

TAKAHASHI, Y ;

FURUTA, T ;

ONO, Y ;

ISHIYAMA, T ;

TABE, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (2B) :950-954

[10] The origin of visible photoluminescence from silicon oxide thin films prepared by dual-plasma chemical vapor deposition [J].

Zhu, M ;

Han, Y ;

Wehrspohn, RB ;

Godet, C ;

Etemadi, R ;

Ballutaud, D .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (10) :5386-5393