Real-time measurements of Si 2p core level during dry oxidation of Si(100)

被引：29

作者：

Enta, Y

Miyanishi, Y

Irimachi, H

Niwano, M

Suemitsu, M

Miyamoto, N

Shigemasa, E

Kato, H

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 98077, Japan

[2] Tohoku Gakuin Univ, Fac Engn, Tagajo, Miyagi 985, Japan

[3] High Energy Accelerator Res Org, Photon Factory, Tsukuba, Ibaraki 305, Japan

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.57.6294

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The chemically shifted Si 2p core level (Si4+) has been measured in real time during initial thermal oxidation of Si(100) by O-2 gas. The time evolutions of the Si4+ intensities showed identical behaviors to those of O 2p intensities reported previously [Y. Enta et al., Appl. Surf. Sci. 100/101, 449 (1996)], demonstrating that there exist two growth modes for the oxidation: the first-order Langmuir-type adsorption mode and two-dimensional island growth mode at oxidation temperatures below and above 650 degrees C, respectively.

引用

页码：6294 / 6296

页数：3

共 8 条

[1]

BANASZAKHOLL MM, 1993, PHYS REV LETT, V71, P2441

[2] Growth kinetics of thermal oxidation process on Si(100) by real time ultraviolet photoelectron spectroscopy [J].