CORE-LEVEL PHOTOEMISSION AND THE STRUCTURE OF THE SI/SIO2 INTERFACE - A REAPPRAISAL

被引：74

作者：

HOLL, MMB ^{[1
]}

LEE, SH ^{[1
]}

MCFEELY, FR ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 09期

关键词：

D O I：

10.1063/1.112109

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoemission spectroscopy of spherosiloxane cluster derived Si/SiO(x) interfaces has allowed the direct assignment of observed spectral features to specific chemical moieties. The implications of these assignments for structural models of the Si/SiO2 interface are explored. Models specifically constructed to be consistent with photoemission data are shown to be incorrect after reanalysis of core-level shifts based on the recently synthesized model systems. A new model for the Si/SiO2 interface is proposed which is consistent with the current understanding of photoemission for Si/SiO(x) interfaces as well as with results from numerous other experiments.

引用

页码：1097 / 1099

页数：3

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