Highly sensitive recognition element based on birefringent porous silicon layers

被引：28

作者：

Gross, E ^{[1
]}

Kovalev, D ^{[1
]}

Künzner, N ^{[1
]}

Timoshenko, VY ^{[1
]}

Diener, J ^{[1
]}

Koch, F ^{[1
]}

机构：

[1] Tech Univ Munich, Phys Dept E16, D-85747 Garching, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 07期

关键词：

D O I：

10.1063/1.1391417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Anisotropically nanostructured silicon layers exhibit a strong in-plane birefringence. Their optical anisotropy parameters are found to be extremely sensitive to the presence of dielectric substances inside of the pores. Polarization-resolved transmittance measurements provide an extremely sensitive tool to analyze the adsorption of various atoms and molecules in negligible quantities. A variation of the transmitted linearly polarized light intensity up to two orders of magnitude combined with a fast optical response in the range of seconds make these layers a good candidate for sensor applications. (C) 2001 American Institute of Physics.

引用

页码：3529 / 3532

页数：4

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