SURFACE REACTIVITY OF LUMINESCENT POROUS SILICON

被引：60

作者：

COFFER, JL ^{[1
]}

LILLEY, SC ^{[1
]}

MARTIN, RA ^{[1
]}

FILESSESLER, LA ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 03期

关键词：

D O I：

10.1063/1.354754

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of addition of a series of organoamine molecules on the luminescence of porous silicon has been examined by steady-state photoluminescence (PL) and Fourier transform infrared spectroscopies. These samples, prepared nonanodically via stain etching techniques and characterized by atomic force microscopy, show dramatic quenching of visible PL upon addition of dilute solutions of the above Lewis base adsorbates. The fractional changes in integrated PL intensity as a function of quencher concentration obey a simple equilibrium model, demonstrating Langmuir-type behavior from which equilibrium constants can be calculated. An observation concomitant with this loss of PL is a diminution of the silicon hydride stretching frequencies near 2100 cm-1.

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页码：2094 / 2096

页数：3

相关论文

共 16 条

[1] THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION [J].

BRANDT, MS ;

FUCHS, HD ;

STUTZMANN, M ;

WEBER, J ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1992, 81 (04) :307-312

[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[3] ADDITION OF FERROCENE DERIVATIVES TO THE SURFACE OF QUANTUM-CONFINED CADMIUM-SULFIDE CLUSTERS - STEADY-STATE AND TIME-RESOLVED PHOTOPHYSICAL EFFECTS [J].

CHANDLER, RR ;

COFFER, JL ;

ATHERTON, SJ ;

SNOWDEN, PT .

JOURNAL OF PHYSICAL CHEMISTRY, 1992, 96 (06) :2713-2717

[4] VISIBLE-LIGHT EMISSION DUE TO QUANTUM SIZE EFFECTS IN HIGHLY POROUS CRYSTALLINE SILICON [J].

CULLIS, AG ;

CANHAM, LT .

NATURE, 1991, 353 (6342) :335-338

[5] PHOTOPHYSICS OF QUANTIZED COLLOIDAL SEMICONDUCTORS DRAMATIC LUMINESCENCE ENHANCEMENT BY BINDING OF SIMPLE AMINES [J].

DANNHAUSER, T ;

ONEIL, M ;

JOHANSSON, K ;

WHITTEN, D ;

MCLENDON, G .

JOURNAL OF PHYSICAL CHEMISTRY, 1986, 90 (23) :6074-6076

[6] VISIBLE LUMINESCENCE FROM SILICON-WAFERS SUBJECTED TO STAIN ETCHES [J].

FATHAUER, RW ;

GEORGE, T ;

KSENDZOV, A ;

VASQUEZ, RP .

APPLIED PHYSICS LETTERS, 1992, 60 (08) :995-997

[7] MICROSTRUCTURAL INVESTIGATIONS OF LIGHT-EMITTING POROUS SI LAYERS [J].

GEORGE, T ;

ANDERSON, MS ;

PIKE, WT ;

LIN, TL ;

FATHAUER, RW ;

JUNG, KH ;

KWONG, DL .

APPLIED PHYSICS LETTERS, 1992, 60 (19) :2359-2361

[8] REVERSIBLE LUMINESCENCE QUENCHING OF POROUS SI BY SOLVENTS [J].

LAUERHAAS, JM ;

CREDO, GM ;

HEINRICH, JL ;

SAILOR, MJ .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1992, 114 (05) :1911-1912

[9] CHEMILUMINESCENCE OF ANODIZED AND ETCHED SILICON - EVIDENCE FOR A LUMINESCENT SILOXENE-LIKE LAYER ON POROUS SILICON [J].

MCCORD, P ;

YAU, SL ;

BARD, AJ .

SCIENCE, 1992, 257 (5066) :68-69

[10] EVIDENCE FOR ADDUCT FORMATION AT THE SEMICONDUCTOR GAS INTERFACE - PHOTOLUMINESCENT PROPERTIES OF CADMIUM SELENIDE IN THE PRESENCE OF AMINES [J].

MEYER, GJ ;

LISENSKY, GC ;

ELLIS, AB .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1988, 110 (15) :4914-4918