Porous-silicon vapor sensor based on laser interferometry

被引：105

作者：

Gao, J ^{[1
]}

Gao, T ^{[1
]}

Sailor, MJ ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Chem & Biochem, La Jolla, CA 92093 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 06期

关键词：

D O I：

10.1063/1.1306640

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Certain porous-silicon (PS) films exhibit well-resolved Fabry-Perot fringes in their optical reflection spectra due to thin-film interference. The fringes shift to higher wavelengths when the PS is exposed to vapors from organic solvents, as a result of an increase in the average refractive index of the PS layer. If a small diode laser is used as the light source, the shift of the Fabry-Perot fringes upon analyte adsorption results in a change in the reflected light intensity, which correlates with the concentration of the analyte (ethanol) in an air stream. Based on this principle, a PS vapor sensor has been demonstrated with a detection limit of 500 ppb and a dynamic range of nearly five orders of magnitude. (C) 2000 American Institute of Physics. [S0003-6951(00)00232-1].

引用

页码：901 / 903

页数：3

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