A study on the leakage current of poly-Si TFTs fabricated by metal induced lateral crystallization

被引：46

作者：

Ihn, TH ^{[1
]}

Kim, TK ^{[1
]}

Lee, BI ^{[1
]}

Joo, SK ^{[1
]}

机构：

[1] Seoul Natl Univ, Coll Technol, Div MS & E, Seoul, South Korea

来源：

MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 01期

关键词：

D O I：

10.1016/S0026-2714(98)00160-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Leakage current of poly-Si TFT fabricated by a metal induced lateral crystallization(MILC) process was investigated in terms of metal contamination and crystallization mechanisms. MILC poly-Si TFTs showed a higher leakage current than those by the solid phase crystallization method at high drain voltages. It turned out that the Ni rich phases in the depleted junction region played the role of trapping and recombination centers to generate the leakage currents and that the leakage current was generated by thermionic field emission. The leakage current could be drastically reduced to 5 pA/mu m at V-GS = 0 V and V-DS = 15 V after the exclusion of the Ni-rich phase from the junction region by a Ni offset MILC process. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：53 / 58

页数：6

共 13 条

[1] CRYSTALLIZATION OF LPCVD SILICON FILMS BY LOW-TEMPERATURE ANNEALING [J].

AOYAMA, T ;

KAWACHI, G ;

KONISHI, N ;

SUZUKI, T ;

OKAJIMA, Y ;

MIYATA, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (04) :1169-1173

[2]

CHIANG A, 1991, 1991 C SOL STAT DEV, P586

[3] ANOMALOUS LEAKAGE CURRENT IN LPCVD POLYSILICON MOSFETS [J].

FOSSUM, JG ;

ORTIZCONDE, A ;

SHICHIJO, H ;

BANERJEE, SK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) :1878-1884

[4]

Ihn TH, 1997, MATER RES SOC SYMP P, V424, P189

[5] Temperature dependent leakage currents in polycrystalline silicon thin film transistors [J].

Kim, CH ;

Sohn, KS ;

Jang, J .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (12) :8084-8090

[6] METAL-CONTACT-INDUCED CRYSTALLIZATION OF SEMICONDUCTORS [J].

KONNO, TJ ;

SINCLAIR, R .

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1994, 179 :426-432

[7]

Kuriyama H., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P563, DOI 10.1109/IEDM.1991.235407

[8]

Lee SW, 1996, IEEE ELECTR DEVICE L, V17, P160, DOI 10.1109/55.485160

[9] PD INDUCED LATERAL CRYSTALLIZATION OF AMORPHOUS SI THIN-FILMS [J].

LEE, SW ;

JEON, YC ;

JOO, SK .

APPLIED PHYSICS LETTERS, 1995, 66 (13) :1671-1673

[10] POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS ON CORNING 7059 GLASS SUBSTRATES USING SHORT-TIME, LOW-TEMPERATURE PROCESSING [J].

LIU, G ;

FONASH, SJ .

APPLIED PHYSICS LETTERS, 1993, 62 (20) :2554-2556

← 1 2 →