PD INDUCED LATERAL CRYSTALLIZATION OF AMORPHOUS SI THIN-FILMS

被引:181
作者
LEE, SW
JEON, YC
JOO, SK
机构
[1] Department of Metallurgical Engineering, Seoul National University, Kwanak-Ku, Seoul 151-742, San 56-1, Shillim-Dong
关键词
D O I
10.1063/1.113888
中图分类号
O59 [应用物理学];
学科分类号
摘要
A thin palladium layer (∼40 Å) was selectively formed on top of amorphous silicon films before annealing and the effects of palladium layer on the crystallization behavior of the amorphous silicon films were investigated. It was observed that the amorphous silicon right under the Pd layer could be crystallized to grain sizes of several hundred angstroms by annealing at 500°C. In addition, the area between the Pd thin pads, patterned by lithography, was found to be crystallized to grain sizes of a few tens of microns in length by the same annealing. Such lateral crystallization was found to reach more than 100 μm in some cases. The lateral crystallization phenomenon might be useful for the fabrication of low temperature polycrystalline-Si thin film transistors, providing large-grained Si films.© 1995 American Institute of Physics.
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页码:1671 / 1673
页数:3
相关论文
共 15 条
[1]  
ABOELFOTOH MO, 1986, APPL PHYS LETT, V49, P1243
[2]   STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J].
BUCKLEY, WD ;
MOSS, SC .
SOLID-STATE ELECTRONICS, 1972, 15 (12) :1331-&
[3]   INTERFACIAL REACTIONS IN THE PD/A-SI/C-SI SYSTEM [J].
EDELMAN, F ;
CYTERMANN, C ;
BRENER, R ;
EIZENBERG, M ;
WEIL, R ;
BEYER, W .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) :289-295
[4]   AL-DOPED AND SB-DOPED POLYCRYSTALLINE SILICON OBTAINED BY MEANS OF METAL-INDUCED CRYSTALLIZATION [J].
GONG, SF ;
HENTZELL, HTG ;
ROBERTSSON, AE ;
HULTMAN, L ;
HORNSTROM, SE ;
RADNOCZI, G .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) :3726-3732
[5]   POLYCRYSTALLINE-SILICON DEVICE TECHNOLOGY FOR LARGE-AREA ELECTRONICS [J].
HAWKINS, WG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (04) :477-481
[6]   CRYSTALLIZATION OF AMORPHOUS-SILICON DURING THIN-FILM GOLD REACTION [J].
HULTMAN, L ;
ROBERTSSON, A ;
HENTZELL, HTG ;
ENGSTROM, I ;
PSARAS, PA .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) :3647-3655
[7]  
JEON YC, 1993, MAT RES SOC P, V334, P81
[8]   LOW-TEMPERATURE CRYSTALLIZATION OF HYDROGENATED AMORPHOUS-SILICON INDUCED BY NICKEL SILICIDE FORMATION [J].
KAWAZU, Y ;
KUDO, H ;
ONARI, S ;
ARAI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (12) :2698-2704
[9]   POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS ON CORNING 7059 GLASS SUBSTRATES USING SHORT-TIME, LOW-TEMPERATURE PROCESSING [J].
LIU, G ;
FONASH, SJ .
APPLIED PHYSICS LETTERS, 1993, 62 (20) :2554-2556
[10]   INTERFERENCE ENHANCED RAMAN-SCATTERING STUDY OF THE INTERFACIAL REACTION OF PD ON A-SI-H [J].
NEMANICH, RJ ;
TSAI, CC ;
THOMPSON, MJ ;
SIGMON, TW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :685-688