Correlation Between AlGaN/GaN MISHFET Performance and HfO2 Insulation Layer Quality

被引：25

作者：

Shi, Junxia ^{[1
]}

Eastman, Lester F. ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 03期

关键词：

AlGaN; GaN; HEMT; HfO2; power switch; PASSIVATION;

D O I：

10.1109/LED.2010.2098839

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

HfO2 films of 15 nm were deposited using atomic layer deposition at temperatures varying from 110 degrees C to 200 degrees C and then to 300 degrees C on AlGaN/GaN HEMT structures. Devices with 300 degrees C HfO2 show dramatically better ON-and OFF-state characteristics under dc biases than those with HfO2 deposited at lower temperatures. High-resolution X-ray diffraction, together with X-ray reflectivity measurements, confirms the superior film quality of the 300 degrees C HfO2 in comparison to the lower temperature grown films.

引用

页码：312 / 314

页数：3

共 8 条

[1] Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures [J].

Ambacher, O ;

Majewski, J ;

Miskys, C ;

Link, A ;

Hermann, M ;

Eickhoff, M ;

Stutzmann, M ;

Bernardini, F ;

Fiorentini, V ;

Tilak, V ;

Schaff, B ;

Eastman, LF .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (13) :3399-3434

[2] The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's [J].

Green, BM ;

Chu, KK ;

Chumbes, EM ;

Smart, JA ;

Shealy, JR ;

Eastman, LF .

IEEE ELECTRON DEVICE LETTERS, 2000, 21 (06) :268-270

[3] Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor [J].

Heil, S. B. S. ;

van Hemmen, J. L. ;

Hodson, C. J. ;

Singh, N. ;

Klootwijk, J. H. ;

Roozeboom, F. ;

de Sanden, M. C. M. van ;

Kessels, W. M. M. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2007, 25 (05) :1357-1366

[4] Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation [J].

Kim, H ;

Thompson, RM ;

Tilak, V ;

Prunty, TR ;

Shealy, JR ;

Eastman, LF .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (07) :421-423

[5] HfO2-III-Nitride RF Switch With Capacitively Coupled Contacts [J].

Koudymov, Alexei ;

Pala, Nezih ;

Tokranov, V. ;

Oktyabrsky, Serge ;

Gaevski, Mikhail ;

Jain, R. ;

Yang, J. ;

Hu, X. ;

Shur, Michael ;

Gaska, Remis ;

Simin, Grigory .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (05) :478-480

[6]

LEE J, 2001, IEDM, P381

[7] High performance AlGaN/GaN power switch with HfO2 insulation [J].

Shi, Junxia ;

Eastman, Lester F. ;

Xin, Xiaobin ;

Pophristic, Milan .

APPLIED PHYSICS LETTERS, 2009, 95 (04)

[8] Demonstration of Low-Leakage-Current Low-On-Resistance 600-V 5.5-A GaN/AlGaN HEMT [J].

Xin, Xiaobin ;

Shi, Junxia ;

Liu, Linlin ;

Edwards, John ;

Swaminathan, Kierthi ;

Pabisz, Marek ;

Murphy, Michael ;

Eastman, Lester F. ;

Pophristic, Milan .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (10) :1027-1029

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