Demonstration of Low-Leakage-Current Low-On-Resistance 600-V 5.5-A GaN/AlGaN HEMT

被引：26

作者：

Xin, Xiaobin ^{[1
]}

Shi, Junxia ^{[2
]}

Liu, Linlin ^{[1
]}

Edwards, John ^{[1
]}

Swaminathan, Kierthi ^{[1
]}

Pabisz, Marek ^{[1
]}

Murphy, Michael ^{[1
]}

Eastman, Lester F. ^{[2
]}

Pophristic, Milan ^{[1
]}

机构：

[1] Velox Semicond Corp, Somerset, NJ 08873 USA

[2] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14583 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 10期

关键词：

HfO2; AlGaN; GaN; HEMT; power switch;

D O I：

10.1109/LED.2009.2029130

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter demonstrates a high-voltage, high-current, and low-leakage-current GaN/AlGaN power HEMT with HfO2 as the gate dielectric and passivation layer. The device is measured up to 600 V, and the maximum ON-state drain current is higher than 5.5 A. Performance of small devices with HfO2 and Si3N4 dielectrics is compared. The electric strength of gate dielectrics is measured for both HfO2 and Si3N4. Devices with HfO2 show better uniformity and lower leakage current than Si3N4 passivated devices. The 5.5-A HfO2 devices demonstrate very low gate (41 nA/mm) and drain (430 nA/mm) leakage-current density and low on-resistance (6.2 Omega . mm or 2.5 m Omega . cm(2)).

引用

页码：1027 / 1029

页数：3

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