Normally-off AlGaN/GaN MOSHFETs with HfO2 gate oxide

被引：38

作者：

Sugiura, S. ^{[1
]}

Kishimoto, S. ^{[1
,2
]}

Mizutani, T. ^{[1
]}

Kuroda, M.

Ueda, T. ^{[3
]}

Tanaka, T. ^{[3
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Nagoya, Aichi 4648601, Japan

[2] Nagoya Univ, Venture Business Lab, Nagoya, Aichi 4648601, Japan

[3] Semicond Co Matsushita, Semicond Device Res Ctr, Kyoto, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 | 2008年 / 5卷 / 06期

基金：

日本学术振兴会;

关键词：

D O I：

10.1002/pssc.200778449

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Normally-off AlGaN/GaN MOSRHETs with a thick HfO2 as a gate oxide have been fabricated. The HfO2 with a thickness of 100 nm was deposited by pulsed-laser deposition. The threshold voltage was 3 V and the maximum drain current was 730 mA/mm at a gate voltage of 10 V. The maximum transconductance was 185 mS/mm, which was about 8 times larger than that of the GaN MOSFETs. The field effect mobility was 900-1.500 cm(2)/Vs, which is also higher than that of the GaN MOSFETs.

引用

页码：1923 / +

页数：2

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