High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates

被引：360

作者：

Dora, Y. ^{[1
]}

Chakraborty, A. ^{[1
]}

McCarthy, L. ^{[1
]}

Keller, S. ^{[1
]}

DenBaars, S. P. ^{[1
]}

Mishra, U. K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 09期

关键词：

breakdown voltage; field plate; GaN; high electron mobility transistor (HEMT);

D O I：

10.1109/LED.2006.881020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs. Devices were tested in Fluorinert to eliminate the breakdown of air, which was identified to limit the breakdown voltage in AlGaN/GaN HEMTs. A single integrated field plate, which is self-aligned with the gate, is shown to support more than a kilovolt breakdown voltage (V-br up to 1900 V was measured with Fluorinert). Devices made with this technology show a good large signal-frequency behavior. Various issues regarding breakdown measurements and interpretation of measurement results are presented.

引用

页码：713 / 715

页数：3

共 11 条

[1] Power and linearity characteristics of field-plated recessed-gate AlGaN-GaNHEMTs [J].

Chini, A ;

Buttari, D ;

Coffie, R ;

Heikman, S ;

Chakraborty, A ;

Keller, S ;

Mishra, UK .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (05) :229-231

[2]

JOHNSON JW, 2004, P EL SOC, P405

[3]

Metze G. M., 1991, IEEE Microwave and Guided Wave Letters, V1, P198, DOI 10.1109/75.84586

[4] Improved power performance for a recessed-gate AlGaN-GaN heterojunction FET with a field-modulating plate [J].

Okamoto, Y ;

Ando, Y ;

Hataya, K ;

Nakayama, T ;

Miyamoto, H ;

Inoue, T ;

Senda, M ;

Hirata, K ;

Kosaki, M ;

Shibata, N ;

Kuzuhara, M .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2004, 52 (11) :2536-2540

[5] OBTAINING THE SPECIFIC CONTACT RESISTANCE FROM TRANSMISSION-LINE MODEL MEASUREMENTS [J].

REEVES, GK ;

HARRISON, HB .

ELECTRON DEVICE LETTERS, 1982, 3 (05) :111-113

[6] High breakdown voltage AlGaN-GaN Power-HEMT design and high current density switching behavior [J].

Saito, W ;

Takada, Y ;

Kuraguchi, M ;

Tsuda, K ;

Omura, I ;

Ogura, T ;

Ohashi, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (12) :2528-2531

[7]

SUH CS, UNPUB IEEE ELECT DEV

[8] Mob power, high efficiency, AlGaN/GaN HEMT technology for wireless base station applications [J].

Vetury, R ;

Wei, Y ;

Green, SR ;

Mercier, TW ;

Leverich, K ;

Garber, PM ;

Poulton, MJ ;

Shealy, JB .

2005 IEEE MTT-S International Microwave Symposium, Vols 1-4, 2005, :487-490

[9]

Wu YF, 2005, INT EL DEVICES MEET, P593

[10] 30-W/mm GaNHEMTs by field plate optimization [J].

Wu, YF ;

Saxler, A ;

Moore, M ;

Smith, RP ;

Sheppard, S ;

Chavarkar, PM ;

Wisleder, T ;

Mishra, UK ;

Parikh, P .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (03) :117-119

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