Improved power performance for a recessed-gate AlGaN-GaN heterojunction FET with a field-modulating plate

被引：87

作者：

Okamoto, Y ^{[1
]}

Ando, Y

Hataya, K

Nakayama, T

Miyamoto, H

Inoue, T

Senda, M

Hirata, K

Kosaki, M

Shibata, N

Kuzuhara, M

机构：

[1] NEC Corp Ltd, Syst Devices Res Labs, R&D Assoc Future Electron Devices, Res & Dev Ctr, Shiga 5200833, Japan

[2] NEC Corp Ltd, Syst Devices Res Labs, R&D Assoc Future Electron Devices, Adv HF Device R&D Ctr, Shiga 5200833, Japan

[3] Toyoda Gosei Co Ltd, R&D Assoc Future Electron Devices, Adv HF Device R&D Ctr, Aichi 4901312, Japan

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2004年 / 52卷 / 11期

关键词：

field-effect transistor (FET); field-modulating plate (FP); GaN; recess;

D O I：

10.1109/TMTT.2004.837159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A recessed-gate AlGaN-GaN field-modulating plate (FP) field-effect transistor (FET) was successfully fabricated on an SiC substrate. By employing a recessed-gate structure on an FP FET, the transconductance was increased from 150 to 270 mS/mm, leading to an improvement in gain characteristics, and current collapse was minimized. At 2 GHz, a 48-mm-wide recessed FP FET exhibited a record output power of 230 W (4.8 W/mm) with 67% power-added efficiency and 9.5-dB linear gain with a drain bias of 53V.

引用

页码：2536 / 2540

页数：5

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