Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n-GaN

被引：119

作者：

Kumar, V

Zhou, L

Selvanathan, D

Adesida, I

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[2] Univ Illinois, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 03期

关键词：

D O I：

10.1063/1.1491584

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A metallization scheme consisting of Ti/Al/Mo/Au with excellent edge acuity has been developed for obtaining low-resistance ohmic contacts to n-GaN. Excellent ohmic characteristics with a specific contact resistivity as low as 4.7x10(-7) Omega-cm(2) were obtained by rapid thermal annealing of evaporated Ti/Al/Mo/Au at 850 degreesC for 30 sec in a N-2 ambient. Additionally, no degradation in specific contact resistivity was observed for these contacts subjected to long-term annealing at 500 degreesC for 360 h. (C) 2002 American Institute of Physics.

引用

收藏

页码：1712 / 1714

页数：3

相关论文

共 19 条

[1] Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN [J].

Boudart, B ;

Trassaert, S ;

Wallart, X ;

Pesant, JC ;

Yaradou, O ;

Théron, D ;

Crosnier, Y ;

Lahreche, H ;

Omnes, F .

JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (05) :603-606

[2] High performance AlGaN/GaN HEMT with improved ohmic contacts [J].

Cai, SJ ;

Li, R ;

Chen, YL ;

Wong, L ;

Wu, WG ;

Thomas, SG ;

Wang, KL .

ELECTRONICS LETTERS, 1998, 34 (24) :2354-2356

[3] Electrical characterization and metallurgical analysis of Pd-containing multilayer contacts on GaN [J].

Chor, EF ;

Zhang, D ;

Gong, H ;

Chen, GL ;

Liew, TYF .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (03) :1242-1249

[4] Very low resistance multilayer ohmic contact to n-GaN [J].

Fan, ZF ;

Mohammad, SN ;

Kim, W ;

Aktas, O ;

Botchkarev, AE ;

Morkoc, H .

APPLIED PHYSICS LETTERS, 1996, 68 (12) :1672-1674

[5] Formation processes and properties of Schottky and ohmic contacts on n-type GaN for field effect transistor applications [J].

Koyama, Y ;

Hashizume, T ;

Hasegawa, H .

SOLID-STATE ELECTRONICS, 1999, 43 (08) :1483-1488

[6] Low resistance Al/Ti/n-GaN ohmic contacts with improved surface morphology and thermal stability [J].

Kwak, JS ;

Mohney, SE ;

Lin, JY ;

Kern, RS .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (07) :756-760

[7] Long-term thermal stability of Ti/Al/Pt/Au Ohmic contacts to n-type GaN [J].

Lee, CT ;

Kao, HW .

APPLIED PHYSICS LETTERS, 2000, 76 (17) :2364-2366

[8] LOW-RESISTANCE OHMIC CONTACTS ON WIDE BAND-GAP GAN [J].

LIN, ME ;

MA, Z ;

HUANG, FY ;

FAN, ZF ;

ALLEN, LH ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1994, 64 (08) :1003-1005

[9] Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN [J].

Luther, BP ;

Mohney, SE ;

Jackson, TN ;

Khan, MA ;

Chen, Q ;

Yang, JW .

APPLIED PHYSICS LETTERS, 1997, 70 (01) :57-59

[10] Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN [J].

Luther, BP ;

DeLucca, JM ;

Mohney, SE ;

Karlicek, RF .

APPLIED PHYSICS LETTERS, 1997, 71 (26) :3859-3861