96W AlGaN/GaN heterojunction FET with field-modulating plate

被引：11

作者：

Okamoto, Y ^{[1
]}

Ando, Y ^{[1
]}

Hataya, K ^{[1
]}

Miyamoto, H ^{[1
]}

Nakayama, T ^{[1
]}

Inoue, T ^{[1
]}

Kuzuhara, M ^{[1
]}

机构：

[1] NEC Corp Ltd, Photon & Wireless Devices Res Labs, R&D Assoc Future Electron Devices, Shiga 5200833, Japan

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 20期

关键词：

D O I：

10.1049/el:20030947

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An AlGaN/GaN heterojunction FET with a field-modulating plate has been successfully fabricated. A maximum drain current of 900 mA/mm was obtained with a gate-drain breakdown voltage of over 150 V A 24 mm-wide FET exhibited 96 W (4.0 W/mm) output power, 54% power-added efficiency and 8.5 dB linear gain at a drain bias of 32 V.

引用

页码：1474 / 1475

页数：2

共 6 条

[1]

ANDO Y, 2001, IEDM, P381

[2] High-power and high-efficiency AlGaN/GaN HEMT operated at 50 V drain bias voltage [J].

Kikkawa, T ;

Nagahara, M ;

Adachi, N ;

Yokokawa, S ;

Kato, S ;

Yokoyama, M ;

Kanamura, M ;

Yamaguchi, Y ;

Hara, N ;

Joshin, K .

2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2003, :167-170

[3] AlGaN/GaN HEMTs - An overview of device operation and applications [J].

Mishra, UK ;

Parikh, P ;

Wu, YF .

PROCEEDINGS OF THE IEEE, 2002, 90 (06) :1022-1031

[4]

Okamoto Y, 2003, IEEE MTT S INT MICR, P225, DOI 10.1109/MWSYM.2003.1210921

[5]

Pribble WL, 2002, IEEE MTT S INT MICR, P1819, DOI 10.1109/MWSYM.2002.1012216

[6]

[No title captured]

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