Etch rates for micromachining processing - Part II

被引:733
作者
Williams, KR
Gupta, K
Wasilik, M
机构
[1] Agilent Technol, Agilent Labs, Palo Alto, CA 94303 USA
[2] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA
关键词
chemical vapor deposition (CVD); etching; evaporation; fabrication; materials processing; micromachining;
D O I
10.1109/JMEMS.2003.820936
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Samples of 53 materials that are used or potentially can be used or in the fabrication of microelectromechanical systems and integrated circuits were prepared: single-crystal silicon with two doping levels, polycrystalline silicon with two doping levels, polycrystalline germanium, polycrystalline SiGe, graphite, fused quartz, Pyrex 7740, nine other preparations of silicon dioxide, four preparations of silicon nitride, sapphire, two preparations of aluminum oxide, aluminum, Al/2%Si, titanium, vanadium, niobium, two preparations of tantalum, two preparations of chromium, Cr on An, molybdenum, tungsten, nickel, palladium, platinum, copper, silver, gold, 10 Ti/90 W, 80 Ni/20 Cr, TiN, four types of photoresist, resist pen, Parylene-C, and spin-on polyinride. Selected samples were etched in 35 different etches: isotropic silicon etchant, potassium hydroxide, 10:1 HE, 5:1 BHF, Pad Etch 4, hot phosphoric acid, Aluminum Etchant Type A, titanium wet etchant, CR-7 chromium etchant, CR-14 chromium etchant, molybdenum etchant, warm hydrogen peroxide, Copper Etchant Type CE-200, Copper Etchant APS 100, dilute aqua regia, AU-5 gold etchant, Nichrome Etchant TFN, hot sulfuric+phosphoric acids, Piranha, Microstrip 2001, acetone, methanol, isopropanol, xenon difluoride, HF+H20 vapor, oxygen plasma, two deep reactive ion etch recipes with two different types of wafer clamping, SF6 plasma, SF6 + O-2 plasma, CF4 plasma, CF4+O-2 plasma, and argon ion milling. The etch rates of 620 combinations of these were measured. The etch rates of thermal oxide in different dilutions of HIT and BHF are also reported. Sample preparation and information about the etches is given.
引用
收藏
页码:761 / 778
页数:18
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