CHEMICAL ETCHING OF SILICON .4. ETCHING TECHNOLOGY

被引：193

作者：

SCHWARTZ, B

ROBBINS, H

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

[2] GALAMAR IND,PALO ALTO,CA 94304

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 12期

关键词：

D O I：

10.1149/1.2132721

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1903 / 1909

页数：7

共 8 条

[1] Reactivity and constitution of nitric and sulphuric acids. I. Some general considerations. [J].

Briner, E .

HELVETICA CHIMICA ACTA, 1935, 18 :363-367

[2] Reactivity and constitution of nitric and sulphuric acids. II. Reactivity of nitric acid in aqueous medium and in acetic medium [J].

Briner, E ;

Bolle, P .

HELVETICA CHIMICA ACTA, 1935, 18 :368-375

[3] A WATER-AMINE-COMPLEXING AGENT SYSTEM FOR ETCHING SILICON [J].

FINNE, RM ;

KLEIN, DL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) :965-&

[4]

Holmes P.J, 1962, ELECTROCHEMISTRY SEM, P256

[5]

Holmes P.J., 1962, ELECTROCHEMISTRY SEM, P329

[6] CHEMICAL ETCHING OF SILICON .2. THE SYSTEM HF, HNO3, H2O, AND HC2H3O2 [J].

ROBBINS, H ;

SCHWARTZ, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (02) :108-111

[7] CHEMICAL ETCHING OF SILICON .1. THE SYSTEM HF,HNO3, AND H2O [J].

ROBBINS, H ;

SCHWARTZ, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (06) :505-508

[8] CHEMICAL ETCHING OF SILICON .3. A TEMPERATURE STUDY IN THE ACID SYSTEM [J].

SCHWARTZ, B ;

ROBBINS, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (04) :365-372

← 1 →