High-Mobility Ge pMOSFET With 1-nm EOT Al2O3/GeOx/Ge Gate Stack Fabricated by Plasma Post Oxidation

被引：180

作者：

Zhang, Rui ^{[1
]}

Iwasaki, Takashi ^{[1
]}

Taoka, Noriyuki ^{[1
]}

Takenaka, Mitsuru ^{[1
]}

Takagi, Shinichi ^{[1
]}

机构：

[1] Univ Tokyo, Sch Engn, Tokyo 1138656, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 02期

关键词：

Equivalent oxide thickness (EOT); germanium; metal-oxide-semiconductor field-effect transistor (MOSFET); mobility; INTERFACE; DENSITY;

D O I：

10.1109/TED.2011.2176495

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An ultrathin equivalent oxide thickness (EOT) Al2O3/GeOx/Ge gate stack with a superior GeOx/Ge metal-oxide-semiconductor (MOS) interface and p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) using this gate stack have been fabricated by a plasma post oxidation method. The properties of the GeOx/Ge MOS interfaces are systemically investigated, and it is revealed that there is a universal relationship between the interface state density (D-it) at the GeOx/Ge interface and the GeOx interfacial layer thickness. Ge pMOSFETs on a (100) Ge substrate using the Al2O3/GeOx/Ge gate stack have been demonstrated with an EOT down to 0.98 nm. It is found that the Ge pMOSFETs exhibit the peak hole mobility values of 515, 466, and 401 cm(2)/V . s at an EOT of 1.18, 1.06, and 0.98 nm, respectively, which has much weaker EOT dependence than the trend of the hole mobility values reported so far, because of low D-it of the present gate stack in the ultrathin EOT region of similar to 1 nm.

引用

页码：335 / 341

页数：7

共 23 条

[21] Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation [J].