Optimized exchange biasing by controlled in situ oxidation

被引:39
作者
Gruyters, M [1 ]
Riegel, D [1 ]
机构
[1] Hahn Meitner Inst Kernforsch Berlin GmbH, D-14109 Berlin, Germany
关键词
D O I
10.1063/1.1321782
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new, simple method is presented for the preparation of thin Co/CoO bilayers exhibiting considerably improved characteristics of the magnetic behavior and large exchange bias effects. The ultrathin antiferromagnetic layer is formed at room temperature by controlled in situ exposure of a clean metal layer to pure oxygen gas. The exposure amounts only 100-10000 L at an oxygen pressure of 10(-5) mbar. High purity gases can be used. This method allows to maintain optimum ultrahigh vacuum conditions in the preparation chamber which is an indispensable condition for the preparation of complex layer systems. (C) 2000 American Institute of Physics. [S0021-8979(00)08023-3].
引用
收藏
页码:6610 / 6613
页数:4
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