Crystal structures, optoelectronic properties, and electronic structures of layered oxychalcogenides MCuOCh (M = Bi, La; Ch = S, Se, Te):: Effects of electronic configurations of M3+ ions

被引:274
作者
Hiramatsu, Hidenori [1 ]
Yanagi, Hiroshi [2 ,3 ]
Kamiya, Toshio [1 ,2 ,3 ]
Ueda, Kazushige [1 ]
Hirano, Masahiro [1 ]
Hosono, Hideo [1 ,2 ,3 ]
机构
[1] Tokyo Inst Technol, Frontier Res Ctr, Japan Sci & Technol Agcy, ERATO SORST,Midori Ku, Yokohama, Kanagawa 2268503, Japan
[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[3] Kyushu Inst Technol, Fac Engn, Dept Mat Sci, Kitakyushu, Fukuoka 8048550, Japan
关键词
D O I
10.1021/cm702303r
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Crystal structures, optoelectronic properties, and electronic structures of layered oxychalcogenides BiCuOCh (Ch = S, Se, Te) have been compared to those of LaCuOCh, with an emphasis on the electronic configurations of Bi3+ (5d(10)6S(2)) and La3+ (5d(0)6s(0)). The BiCuOCh series were expected to exhibit better hole-transport properties than the LaCuOCh series because the pseudo-closed-shell 6S(2) electronic configuration of the Bi3+ cation was expected to form valence band maxima (VBM) by admixing with the p orbitals of the Ch anions. However, the two series of compounds exhibited similar electrical properties, suggesting that the contribution of the Bi 6s orbitals to the VBM is small in BiCuOCh. The crystal structures and optical properties showed distinct differences; for example, the band gaps of BiCuOCh were smaller than those of LaCuOCh. These findings can be understood on the basis of the electronic structures obtained by photoelectron spectroscopy and density functional theory calculations. The Bi 6s orbitals form stronger and deeper chemical bonds with the O 2p orbitals than with Ch p orbitals and are located similar to 2 eV below the VBM, which is mainly formed from the Cu 3d and Ch p orbitals. Thus, the Bi 6s(2) configuration contributes little to the VBM, and BiCuOCh and LaCuOCh have similar hole-transport properties. Also, the smaller band gaps of BiCuOCh result from the deepening of the conduction-band-minima levels, which are composed of unoccupied Bi 6p orbitals.
引用
收藏
页码:326 / 334
页数:9
相关论文
共 68 条
[51]   First-principles calculations of native defects in tin monoxide [J].
Togo, A. ;
Oba, F. ;
Tanaka, I. ;
Tatsumi, K. .
PHYSICAL REVIEW B, 2006, 74 (19)
[52]   Transparent p-type semiconductor: LaCuOS layered oxysulfide [J].
Ueda, K ;
Inoue, S ;
Hirose, S ;
Kawazoe, H ;
Hosono, H .
APPLIED PHYSICS LETTERS, 2000, 77 (17) :2701-2703
[53]   Valence-band structures of layered oxychalcogenides, LaCuOCh (Ch=S, Se, and Te), studied by ultraviolet photoemission spectroscopy and energy-band calculations [J].
Ueda, K ;
Hosono, H ;
Hamada, N .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (04)
[54]   Energy band structure of LaCuOCh (Ch = S, Se and Te) calculated by the full-potential linearized augmented plane-wave method [J].
Ueda, K ;
Hosono, H ;
Hamada, N .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (28) :5179-5186
[55]   Single-atomic-layered quantum wells built in wide-gap semiconductors LnCuOCh (Ln=lanthanide, Ch=chalcogen) -: art. no. 155305 [J].
Ueda, K ;
Hiramatsu, H ;
Ohta, H ;
Hirano, M ;
Kamiya, T ;
Hosono, H .
PHYSICAL REVIEW B, 2004, 69 (15) :155305-1
[56]   Electrical and optical properties and electronic structures of LnCuOS (Ln = La∼Nd) [J].
Ueda, K ;
Takafuji, K ;
Hiramatsu, H ;
Ohta, H ;
Kamiya, T ;
Hirano, M ;
Hosono, H .
CHEMISTRY OF MATERIALS, 2003, 15 (19) :3692-3695
[57]   Preparation and crystal structure analysis of CeCuOS [J].
Ueda, K ;
Takafuji, K ;
Hosono, H .
JOURNAL OF SOLID STATE CHEMISTRY, 2003, 170 (01) :182-187
[58]   Band gap engineering, band edge emission, and p-type conductivity in wide-gap LaCuOS1-xSex oxychalcogenides [J].
Ueda, K ;
Hosono, H .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (07) :4768-4770
[59]   Room-temperature excitons in wide-gap layered-oxysulfide semiconductor: LaCuOS [J].
Ueda, K ;
Inoue, S ;
Hosono, H ;
Sarukura, N ;
Hirano, M .
APPLIED PHYSICS LETTERS, 2001, 78 (16) :2333-2335
[60]   First-principles indicators of metallicity and cation off-centricity in the IV-VI rocksalt chalcogenides of divalent Ge, Sn, and Pb [J].
Waghmare, UV ;
Spaldin, NA ;
Kandpal, HC ;
Seshadri, R .
PHYSICAL REVIEW B, 2003, 67 (12) :10