Evidence of spontaneous formation of steps on silicon(100)

被引：51

作者：

Zhong, L

Hojo, A

Matsushita, Y

Aiba, Y

Hayashi, K

Takeda, R

Shirai, H

Saito, H

Matsushita, J

Yoshikawa, J

机构：

[1] Toshiba Ceramics R and D, Semiconductor Silicon Division, Hadano 257

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.54.R2304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Extra steps have been found with atomic-force microscopy generated on rather flat silicon (100) surfaces annealed at 1200 degrees C in hydrogen, through a comparison with the surface annealed in argon, which exhibits a typical (S-a+S-b) step structure. It is suggested that the extra steps are spontaneously generated due to the relaxation of the strain energy associated with the atomic dimers on the reconstructed surface.

引用

收藏

页码：R2304 / R2307

页数：4

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