Preparation of oxygen-containing Pt and Pt oxide thin films by reactive sputtering and their characterization

被引：54

作者：

Abe, Y

Yanagisawa, H

Sasaki, K

机构：

[1] Kitami Inst Technol, Fac Engn, Dept Mat Sci, Kitami, Hokkaido 0908507, Japan

[2] Kitami Inst Technol, Fac Engn, Dept Elect & Elect Engn, Kitami, Hokkaido 0908507, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 08期

关键词：

D O I：

10.1143/JJAP.37.4482

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oxygen-containing Pt and Pt oxide thin films were prepared by reactive sputtering in Ar and O-2 gas atmosphere and effects of oxygen flow ratio on crystallinity, chemical bonding state and resistivity were studied. Polycrystalline oxygen-containing Pt and amorphous Pt oxide thin films were obtained at O-2 flow ratios below 20% and above 30%; respectively. It is confirmed that these films are composed of the mixture of Pt, PtO and PtO2 and the oxygen content in these films increases with an increase in the O-2 flow ratio. Though PtOx films with x less than or equal to 0.6 show low resistivity with metallic conduction, those with higher oxygen content show semiconducting characteristics and their resistivity increases with increasing oxygen content.

引用

页码：4482 / 4486

页数：5

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