Formation process and electrical property of RuO2 thin films prepared by reactive sputtering

被引:32
作者
Kaga, Y
Abe, Y
Yanagisawa, H
Sasaki, K
机构
[1] Kitami Inst Technol, Fac Engn, Dept Mat Sci, Kitami, Hokkaido 0908507, Japan
[2] Kitami Inst Technol, Fac Engn, Dept Elect & Elect Engn, Kitami, Hokkaido 0908507, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 6A期
关键词
RuO2 thin film; resistivity and deposition rate of RuO2; rf magnetron sputtering; X-ray diffraction; X-ray photoelectron spectroscopy;
D O I
10.1143/JJAP.37.3457
中图分类号
O59 [应用物理学];
学科分类号
摘要
RuO2 thin films were prepared by reactive sputtering in Ar + O-2 gas and their crystal structure, chemical binding state and resistivity were studied. We observed that the formation process of RuO2 films could be classified into two process as depending on the O-2 dow ratio. In the 18-28% O-2 dow region, the deposition rate around 28 nm/min was obtained and well crystallized RuO2 films with preferential (110) plane were deposited. In the O-2 flow region above 32%, the deposition rate decreased to around 8 nm/min and fine grain or amorphous RuO2 films were deposited. These changes of deposition rate and crystallinity were caused by the difference of oxidation reaction process of Ru at the substrate surface or the target surface. Resistivity of the RuO2 films decreased with an increase of the substrate temperature and a minimum resistivity of 42 mu Omega cm was obtained at 500 degrees C and 20% O-2 flow.
引用
收藏
页码:3457 / 3461
页数:5
相关论文
共 21 条
  • [1] INFLUENCE OF PLATINUM INTERLAYERS ON THE ELECTRICAL-PROPERTIES OF RUO2/PB(ZR0.53TI0.47)O-3/RUO2 CAPACITOR HETEROSTRUCTURES
    ALSHAREEF, HN
    BELLUR, KR
    KINGON, AI
    AUCIELLO, O
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (02) : 239 - 241
  • [2] HIGH-TEMPERATURE CHEMISTRY OF RUTHENIUM-OXYGEN SYSTEM
    BELL, WE
    TAGAMI, M
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1963, 67 (11) : 2432 - &
  • [3] CHEMICAL VAPOR-DEPOSITION OF RUTHENIUM AND RUTHENIUM DIOXIDE FILMS
    GREEN, ML
    GROSS, ME
    PAPA, LE
    SCHNOES, KJ
    BRASEN, D
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2677 - 2685
  • [4] HETEROEPITAXIAL GROWTH OF HIGHLY CONDUCTIVE METAL-OXIDE RUO2 THIN-FILMS BY PULSED-LASER DEPOSITION
    JIA, QX
    WU, XD
    FOLTYN, SR
    FINDIKOGLU, AT
    TIWARI, P
    ZHENG, JP
    JOW, TR
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (12) : 1677 - 1679
  • [5] (Ba, Sr)TiO3 films prepared by liquid source chemical vapor deposition on Ru electrodes
    Kawahara, T
    Yamamuka, M
    Yuuki, A
    Ono, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (9B): : 4880 - 4885
  • [6] Characterization of TiN films prepared by a conventional magnetron sputtering system: Influence of nitrogen flow percentage and electrical properties
    Kawamura, M
    Abe, Y
    Yanagisawa, H
    Sasaki, K
    [J]. THIN SOLID FILMS, 1996, 287 (1-2) : 115 - 119
  • [7] X-RAY PHOTOELECTRON SPECTROSCOPIC STUDIES OF RUTHENIUM-OXYGEN SURFACES
    KIM, KS
    WINOGRAD, N
    [J]. JOURNAL OF CATALYSIS, 1974, 35 (01) : 66 - 72
  • [8] OXIDE FORMATION ON RUTHENIUM OBSERVED BY TDS AND ESCA
    KLEIN, R
    SIEGEL, R
    ERICKSON, NE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 489 - 491
  • [9] REACTIVELY SPUTTERED RUO2 DIFFUSION-BARRIERS
    KOLAWA, E
    SO, FCT
    PAN, ETS
    NICOLET, MA
    [J]. APPLIED PHYSICS LETTERS, 1987, 50 (13) : 854 - 855
  • [10] REACTIVE SPUTTERING OF RUO2 FILMS
    KOLAWA, E
    SO, FCT
    FLICK, W
    ZHAO, XA
    PAN, ETS
    NICOLET, MA
    [J]. THIN SOLID FILMS, 1989, 173 (02) : 217 - 224