Characterization of TiN films prepared by a conventional magnetron sputtering system: Influence of nitrogen flow percentage and electrical properties

TiN films were prepared by reactive sputtering using a radio-frequency magnetron sputtering system. Ti films containing nitrogen were also formed, depending on nitrogen flow. For all films the crystal structure, chemical binding state and composition were investigated. An abrupt transition occurred in the narrow region between 7% and 8% nitrogen how. Other phases like Ti2N or amorphous state were not observed in the transition process. The electrical resistivity of TiN prepared at 400 degrees C with 8% of nitrogen how was 24 mu Omega cm, equivalent to that of bulk TiN. Films showed low resistivity at higher nitrogen flow (10% and 12%). Films kept low resistivity (30 mu Omega cm) at 50 nm thickness, and the continuity of the film was confirmed even at 5 nm thickness.