HETEROEPITAXIAL GROWTH OF HIGHLY CONDUCTIVE METAL-OXIDE RUO2 THIN-FILMS BY PULSED-LASER DEPOSITION

被引：42

作者：

JIA, QX ^{[1
]}

WU, XD ^{[1
]}

FOLTYN, SR ^{[1
]}

FINDIKOGLU, AT ^{[1
]}

TIWARI, P ^{[1
]}

ZHENG, JP ^{[1
]}

JOW, TR ^{[1
]}

机构：

[1] USA,RES LAB,ELECTR & POWER SOURCES DIRECTORATE,FT MONMOUTH,NJ 07703

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 12期

关键词：

D O I：

10.1063/1.115054

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly conductive ruthenium oxide (RuO2) has been epitaxially grown on LaAlO3 substrates by pulsed laser deposition. The RuO2 film is (hOO) oriented normal to the substrate surface. The heteroepitaxial growth of RuO2 on LaAlO3 is demonstrated by the strong in-plane orientation of thin films with respect to the major axes of the substrate. High crystallinity of RuO2 thin films is also determined from Rutherford backscattering channeling measurements. Electrical measurements on the RuO2 thin films demonstrate a quite low room-temperature resistivity of 35+/-2 mu Omega cm at deposition temperatures of above 500 degrees C. (C) 1995 American Institute of Physics.

引用

页码：1677 / 1679

页数：3

共 22 条

[1] INFLUENCE OF PLATINUM INTERLAYERS ON THE ELECTRICAL-PROPERTIES OF RUO2/PB(ZR0.53TI0.47)O-3/RUO2 CAPACITOR HETEROSTRUCTURES
ALSHAREEF, HN
BELLUR, KR
KINGON, AI
AUCIELLO, O
[J]. APPLIED PHYSICS LETTERS, 1995, 66 (02) : 239 - 241
[2] ARMSTRONG JA, 1978, IBM TECH DISC B, V20, P4633
[3] FATIGUE OF FERROELECTRIC PBZRXTIYO3 CAPACITORS WITH RU AND RUOX ELECTRODES
BERNSTEIN, SD
WONG, TY
KISLER, Y
TUSTISON, RW
[J]. JOURNAL OF MATERIALS RESEARCH, 1993, 8 (01) : 12 - 13
[4] CHEMICAL VAPOR-DEPOSITION OF RUTHENIUM AND RUTHENIUM DIOXIDE FILMS
GREEN, ML
GROSS, ME
PAPA, LE
SCHNOES, KJ
BRASEN, D
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2677 - 2685
[5] MEASUREMENT OF THE TUNNELING AND HOPPING PARAMETERS IN RUO2 THICK-FILMS
HALDER, NC
SNYDER, RJ
[J]. ELECTROCOMPONENT SCIENCE AND TECHNOLOGY, 1984, 11 (02): : 123 - 136
[6] CONDUCTING METALLIC OXIDE CONTACTS ON SUPERCONDUCTING YBA2CU3O7-X THIN-FILMS
JIA, QX
ANDERSON, WA
[J]. IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1992, 15 (01): : 121 - 125
[7] SURFACE AND INTERFACE PROPERTIES OF FERROELECTRIC BATIO3 THIN-FILMS ON SI USING RUO2 AS AN ELECTRODE
JIA, QX
CHANG, LH
ANDERSON, WA
[J]. JOURNAL OF MATERIALS RESEARCH, 1994, 9 (10) : 2561 - 2565
[8] SPUTTER DEPOSITION OF YBA2CU3O7-X FILMS ON SI AT 500-DEGREES-C WITH CONDUCTING METALLIC OXIDE AS A BUFFER LAYER
JIA, QX
ANDERSON, WA
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (03) : 304 - 306
[9] REACTIVELY SPUTTERED RUO2 THIN-FILM RESISTOR WITH NEAR ZERO TEMPERATURE-COEFFICIENT OF RESISTANCE
JIA, QX
SHI, ZQ
JIAO, KL
ANDERSON, WA
COLLINS, FM
[J]. THIN SOLID FILMS, 1991, 196 (01) : 29 - 34
[10] JIA QX, IN PRESS MATER RES

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