Electronic properties of CVD and synthetic diamond

Transport and contact properties of synthetic IIb- and intrinsic chemical vapor deposition (CVD) -diamond films are discussed. The samples have been investigated by time-of-flight and transient photoconductivity experiments using Cr/Au contacts. A hole depletion layer at the Cr/Au-IIb-diamond interface and an electron depletion layer al the Cr/Au-CVD-diamond interface is detected. The data indicate that our normally undoped CVD-diamond films are n-type semiconductors. In IIb diamond the mobilities of electrons and holes have been measured, while in CVD diamond no carrier transit can be detected due to the short Schubweg less than or equal to 1 mu m. Two trap levels located approximately 190 meV below the conduction band and 670 meV above the valence band are deduced. Electron spin resonance experiments demonstrate that these CVD films are highly defective, containing about 10(18) cm(-3) carbon related defects (g = 2.0029).