DENSITY OF STATES DISTRIBUTION IN DIAMOND THIN-FILMS

被引：40

作者：

MORT, J

MACHONKIN, MA

OKUMURA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 04期

关键词：

D O I：

10.1063/1.105461

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Space-charge-limited hole currents in nominally undoped diamond thin films have been studied using thin, highly boron-doped (p+) diamond layers as injecting contacts. The results obtained from these p+-p-Si structures have been analyzed to determine, for the first time, the bulk distribution of localized states N(E) in polycrystalline diamond thin films. The values of N(E), covering an energy range of about 0.8-0.6 eV above the valence band, indicate that the density of states at 0.8 eV is about 10(15) cm-3 eV-1 but rises rapidly, within the 0.2 eV, to about 10(18) cm-3 eV-1.

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页码：455 / 457

页数：3

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