DENSITIES OF STATES BELOW MIDGAP DETERMINED FROM THE SPACE-CHARGE-LIMITED CURRENTS OF HOLES IN INTRINSIC HYDROGENATED AMORPHOUS-SILICON

被引：5

作者：

DAWSON, RM ^{[1
]}

WRONSKI, CR ^{[1
]}

BENNETT, M ^{[1
]}

机构：

[1] SOLAREX CORP,DIV THIN FILM,NEWTOWN,PA 18940

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 03期

关键词：

D O I：

10.1063/1.104658

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Space-charge-limited currents of holes have been obtained in intrinsic hydrogenated amorphous silicon layers using p-i-p structures and have been used to derive the densities of states distribution between 1.0 and 0.7 eV from the hole mobility edge. The densities obtained near miggap are consistent with the measured densities of dangling bond defects located over an energy range of about 0.3V. At 0.7 eV from the valence-band mobility edge, the densities are consistent with the densities expected from the Urbach edge tail states. Such space-charge-limited currents offer a powerful tool for the direct measurement of the densities of states below the Fermi level in a-Si:H and its alloys.

引用

页码：272 / 274

页数：3

共 15 条

[1]

DAWSON RM, 1990, MATER RES SOC SYMP P, V192, P145, DOI 10.1557/PROC-192-145

[2] DETERMINATION OF MIDGAP DENSITY OF STATES IN A-SI-H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS [J].