Imaging layers for 50 kV electron beam lithography: Selective displacement of noncovalently bound amine ligands from a siloxane host film

被引:46
作者
Dressick, WJ
Chen, MS
Brandow, SL
Rhee, KW
Shirey, LM
Perkins, FK
机构
[1] USN, Ctr Biomol Sci & Engn, Res Lab, Washington, DC 20375 USA
[2] USN, Nanofabricat Proc Facil, Res Lab, Washington, DC 20375 USA
[3] USN, Div Elect Sci & Technol, Res Lab, Washington, DC 20375 USA
[4] SFA Inc, Largo, MD 20774 USA
关键词
D O I
10.1063/1.1340860
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the development of an imaging layer technology for 50 kV electron-beam lithography based upon the displacement of noncovalently bound amine ligands from a siloxane host film. The patterned films were used as templates for the selective deposition of an electroless nickel film resulting in a positive tone imaging mechanism. The deposited nickel was sufficiently robust to function as an etch mask for pattern transfer by reactive ion etching. Metallized and etched patterns with linewidths to approximately 40 nm are demonstrated using an exposure dose of 500 muC/cm(2). (C) 2001 American Institute of Physics.
引用
收藏
页码:676 / 678
页数:3
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