Anisotropic silicon trenches 300-500 μm deep employing time multiplexed deep etching (TMDE)

被引：38

作者：

Ayón, AA ^{[1
]}

Zhang, X ^{[1
]}

Khanna, R ^{[1
]}

机构：

[1] MIT, Dept Elect Engn, Cambridge, MA 02139 USA

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2001年 / 91卷 / 03期

关键词：

anisotropic silicon trenches; multiplexed deep etching; deep reactive ion etching;

D O I：

10.1016/S0924-4247(01)00611-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports solutions to the problem of profile control of narrow trenches in the vicinity of wider topographic features, as well as for etching high aspect ratio, anisotropic trenches with depths in the 300-500 mum range, and of widths between 12 to 18 mum. Additionally, specific operating conditions are discussed to address uniformity variations across dies with diameters in excess of 4200 mum. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：381 / 385

页数：5

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