CONDUCTANCE CONSIDERATIONS IN THE REACTIVE ION ETCHING OF HIGH ASPECT RATIO FEATURES

被引：158

作者：

COBURN, JW

WINTERS, HF

机构：

来源：

关键词：

D O I：

10.1063/1.101937

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2730 / 2732

页数：3

共 16 条

[1] Ameen M., 1988, Semiconductor International, V11, P122
[2] SINGLE SILICON ETCHING PROFILE SIMULATION
ARIKADO, T
HORIOKA, K
SEKINE, M
OKANO, H
HORIIKE, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (01): : 95 - 99
[3] TRENCH ETCHES IN SILICON WITH CONTROLLABLE SIDEWALL ANGLES
CARLILE, RN
LIANG, VC
PALUSINSKI, OA
SMADI, MM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : 2058 - 2064
[4] STRUCTURAL EFFECTS ON A SUB-MICRON TRENCH PROCESS
CHIN, DJ
DHONG, SH
LONG, GJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (07) : 1705 - 1707
[5] REACTIVE ION ETCHING OF THROUGH-THE-WAFER VIA CONNECTIONS FOR CONTACTS TO GAAS-FETS
COOPER, CB
DAY, ME
YUEN, C
SALIMIAN, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (10) : 2533 - 2535
[6] Dushman S., 1962, SCI FDN VACUUM TECHN, P94
[7] EFFECT OF POTENTIAL-FIELD ON ION DEFLECTION AND SHAPE EVOLUTION OF TRENCHES DURING PLASMA-ASSISTED ETCHING
ECONOMOU, DJ
ALKIRE, RC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (04) : 941 - 949
[8] ENGELHARDT M, 1986, J ELECTROCHEM SOC, V134, P1985
[9] THE REACTION OF FLUORINE-ATOMS WITH SILICON
FLAMM, DL
DONNELLY, VM
MUCHA, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3633 - 3639
[10] HERB GK, 1987, SOLID STATE TECHNOL, V30, P109