EFFECT OF POTENTIAL-FIELD ON ION DEFLECTION AND SHAPE EVOLUTION OF TRENCHES DURING PLASMA-ASSISTED ETCHING

被引：76

作者：

ECONOMOU, DJ ^{[1
]}

ALKIRE, RC ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT CHEM ENGN,URBANA,IL 61801

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 04期

关键词：

D O I：

10.1149/1.2095842

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：941 / 949

页数：9

共 30 条

[1] PROFILE CONTROL WITH DC BIAS IN PLASMA-ETCHING [J].

BRUCE, RH ;

REINBERG, AR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) :393-396

[2]

CARSLAW HS, 1959, CONDUCTION HEAT SOLI

[3] STRUCTURAL EFFECTS ON A SUB-MICRON TRENCH PROCESS [J].

CHIN, DJ ;

DHONG, SH ;

LONG, GJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (07) :1705-1707

[4] BULK AND SURFACE CONDUCTION IN CVD SIO2 AND PSG PASSIVATION LAYERS [J].

COMIZZOLI, RB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (03) :386-391

[5]

COMIZZOLI RB, 1976, RCA REV, V37, P473

[6]

ECONOMOU D, UNPUB

[7]

ECONOMOU DJ, UNPUB J ELECTROCHEM

[8]

ECONOMOU DJ, 1986, THESIS U ILLINOIS

[9]

FUNG CD, 1984, ELECTROCHEMICAL SOC, V842, P578

[10] OXYGEN ION-BEAM ETCHING FOR PATTERN TRANSFER [J].

GOKAN, H ;

ITOH, M ;

ESHO, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01) :34-37

← 1 2 3 →