SINGLE SILICON ETCHING PROFILE SIMULATION

[1] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[2] COTANA C, 1972, J MATER SCI, V7, P467

[3] HORIIKE Y, 1981, JPN J APPL PHYS, V20, P817

[4] KURE T, 1981, 3RD P S DRY PROC, P83

[5] Kurosawa K., 1981, International Electron Devices Meeting, P384

[6] SI ETCH RATE AND ETCH YIELD WITH AR+/CL-2 SYSTEM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (12) : 2429 - 2430

[7] SATO M, 1984, 6TH P S DRY PROC TOK, P109

[8] Sunami H., 1982, International Electron Devices Meeting. Technical Digest, P806

[1] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[2] COTANA C, 1972, J MATER SCI, V7, P467

[3] HORIIKE Y, 1981, JPN J APPL PHYS, V20, P817

[4] KURE T, 1981, 3RD P S DRY PROC, P83

[5] Kurosawa K., 1981, International Electron Devices Meeting, P384

[6] SI ETCH RATE AND ETCH YIELD WITH AR+/CL-2 SYSTEM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (12) : 2429 - 2430

[7] SATO M, 1984, 6TH P S DRY PROC TOK, P109

[8] Sunami H., 1982, International Electron Devices Meeting. Technical Digest, P806